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| Datasheet File OCR Text: |
| MRF837 NPN SILICON RF LOW POWER TRANSISTOR DESCRIPTION: The ASI MRF837 is Designed primerily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. PACKAGE STYLE MACRO-X MILLIMETERS DIM MIN A C D F G 4.44 1.90 0.84 0.20 0.76 7.24 10.54 --MAX 5.21 2.54 0.99 0.30 0.14 8.13 11.43 1.65 INCHES MIN 0.175 0.075 0.033 0.008 0.030 0.285 0.415 --MAX 0.205 0.100 0.039 0.012 0.045 0.320 0.450 0.065 FEATURES INCLUDE: * Min gain 8.0 dB @ 750 mW/870 MHz * Silicon Nitride passivated * Low cost Plastic Package MAXIMUM RATINGS IC VCBO PDISS TJ TSTG JC 200 mA 36 V 1.0 W @ TC = 25 C -65 Cto +150 C -65 Cto +150 C 40 C/W 1 = COLLECTOR 2 =EMITER 3 = BASE K L N CHARACTERISTICS SYMBOL BVCES BVCEO BVEBO ICES hFE COB PG C IC = 5.0 mA IC = 5.0 mA IE = 100 A VCE = 15 V VCE = 10 V VCB = 15 V TC = 25 C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 36 16 4.0 100 UNITS V V V A --pF dB % IC = 50 mA f = 1.0 MHz POUT = 0.75 W f = 870 MHz 30 1.8 8.0 55 10 60 200 2.5 VCE = 12.5 V A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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